Product Details
40% Concertrator Triple Junction Solar Cell
GalnP/InGaAs/Ge triple junction solar cell with stability performance
Multilayer antireflective coating provides low reflectance over a wavelength range of 0.3 to 1.8 um
Special coating design for OSR
Stable performance from 500 to 1000 suns
Optimized grid design 1 higher Pmax
Double sided welding
Size can be customized
To adapt to the harsh climate
Capacity ： 3Mw/month
Design and Mechanical Data
| Base Material | GalnP₂/InGaAs/Ge |
| AR coating | TiOx/Al₂O₃ |
| Chip Size | 5.1 * 6mm² ± 0.01mm² |
| Active Cell Area | 25 mm² |
| Cell Thickness | 175 ± 20μm |
| Polarity | N on P |
| Thickness of front contact | ~6 μm |
| Thickness of back contact | ~4 μm |
Typical performace under 500X sun concentration
Typical Electrical Data
| Sun concentration | Isc(A) | Voc(V) | Imp(A) | Vmp(V) | FF | Eff. |
| X 500 | 1.872 | 3.232 | 1.794 | 2.852 | 84.58% | 40.93% |
| X 1000 | 3.772 | 3.253 | 3.456 | 2.913 | 82.05% | 40.27% |
Measurement condition: AM1.5G,T= 25℃,50W/cm²(x500),100W/cm²(X1000)
Concentrating solar cells use convex lenses or parabolic mirrors to focus sunlight to several times, dozens of times, or hundreds or even thousands of times, and then project it onto the solar cell. At this time, the solar cell may generate a corresponding multiple of electric power. They have the advantages of high conversion rate, small battery footprint and low consumables. The representative high-power photovoltaic cell is the triple-junction gallium arsenide cell.
High photoelectric conversion efficiency: The theoretical conversion efficiency is high.
Broad Spectrum Absorption: The full spectrum absorbs 95% of sunlight energy, and even weak light generates electricity.
Temperature resistance: It can still work normally under the condition of 390℃, and it is not sensitive to high temperature.
Low energy consumption manufacturing process: one-fifth of that of crystalline silicon photovoltaic cells.
Gallium arsenide: (chemical formula: GaAs) is a compound synthesized by two elements, gallium and arsenic, and is also an important group IIIA and group VA compound semiconductor material.
Concentrated solar photovoltaic cells are a combination of [Concentrator Photovoltaic] + [High Concentration Mirror Fresnel Lens] + [Sun Tracker], which converts solar energy into The efficiency can reach 31% to 40.7%. Although the conversion efficiency is high, due to the long sunshine time, it was used in the space industry in the past, and now it can be used in the power generation industry with a solar tracker. The main material of concentrating solar photovoltaic cells is concentrated gallium arsenide. (GaAs), also known as III-V (III-V) materials, namely triple-junction gallium arsenide cells, the concentrating type is different from silicon wafer solar technology, and can absorb a wider range of solar spectrum energy through multi-junction compound semiconductors , which can absorb the energy of the wavelength of 400-1,200nm in the solar spectrum. At present, the concentrating solar cell with three junctions InGaP/GaAs/Ge can greatly improve the conversion efficiency, and the heat resistance of the concentrating solar cell is higher than that of ordinary solar cells. Wafer-type solar cells are on the rise again.
Energy conversion ratio comparison:
Thin-film solar energy (7% to 12%), wafer solar energy (12% to 20%), traditional nuclear power plants (30%), thermal power generation (36.8%), concentrated solar energy (31% to 40.7%), New nuclear power plants (42-57%)