Product Details
Gallium arsenide (GaAs) belongs to the III-V group of compound semiconductor materials, and its energy gap is more suitable for matching with the solar spectrum, and it can withstand high temperatures. Compared with silicon solar cells, gallium arsenide solar cells have better performance.
The band gap of GaAs solar cells is wider than that of silicon, which makes its spectral responsivity and spatial solar spectral matching ability better than that of silicon. At present, the theoretical efficiency of silicon cells is about 23%, while the theoretical efficiency of single-junction gallium arsenide solar cells reaches 27%, and the theoretical efficiency of multi-junction gallium arsenide solar cells exceeds 50%. At present, China's mass production level can reach more than 30%.
1U satellite board product features:
Select triple junction GaAs solar cells
Using the manufacturing process of aerospace products
High reliability
Optional accessories: solar sensor, temperature sensor, magnetic torquer, MEMS gyroscope
Typical product performance parameters of 1U satellite board
Model | 1U | 2U | 3U | 6U |
Base Panel | FR4/Kapton AI | |||
Power (W) | 2.35 | 4.71 | 8.25 | 16.5 |
Cell Material | (GaAs) | |||
Mass (g) | 40 | 80 | 120 | 240 |
Connection Method | 2S1P | 2S2P | 7S1P | 7S2P |
Dimensions (mm) | Top / Bottom: 98*98 Side: 83*98 | 83*211.5 | 83*338 | 182.6*338 |
Lifetime | 2a | |||
Operating Temperature ℃ | -55~+125 | |||
Cell Efficiency | 30% | |||
Sun Sensor & Temperature Sensor | Optional | |||
Panel Thickness (mm) | 1.8 | |||
Cover Glass (mm) | 0.12 |