Product Details
The gallium arsenide cell for satellite solar panels relies on aerospace power supply products. Its conversion efficiency is 30-35%, the thickness of the module is less than 1 mm, and it has good high energy density and special environmental tolerance.
Electrical properties under standard test conditions: (AM1.5, 1000W/m2, 25℃)
Features
The triple-junction GaAs solar cell uses germanium as the substrate, and is formed by three N/P sub-cells connected in series through tunneling junctions, with high efficiency and strong radiation resistance. .
Application Field
Low-orbit vehicles, medium-orbit vehicles, high-orbit vehicles (nano-satellites, small satellites, commercial satellites, large satellites, drones, etc.)
Basic Data
Material: GaInP/InGaAs/Ge Triple Junction Solar Cell
Size:（80.15±0.05）mm *（40.15±0.05）mm
Area: 30.15c㎡
Thickness: 0.36±0.02mm
Weight:（125±12）mg/c㎡
Anti-reflection coating: TiOx/Al2O3
Cover glass: KFB120
Cover sheet thickness: 120±20 μm
Interconnect Sheet Material: Silver / Kovar Silver Plated
Interconnect thickness: 20/25μm
Electrical Performance Data (AM0, 1SUN, 1353w/㎡, 25℃)
Average open circuit voltage Voc (mV): 2740
Average short-circuit current density Joc (mA/c㎡): 17.4
Maximum power voltage Vm (mV): 2430
Maximum power current density Joc (mA/c㎡): 16.7
Average conversion efficiency ηbare: 30%
Fill Factor: 0.850
Irradiation Intensity:（AM0,1SUN,1353w/㎡,25℃）
Irradiation intensity 1*1014e/cm2 5*1014e/cm2 1*1015e/cm2
Im/Imo 0.99 0.97 0.94
Vm/Vmo 0.96 0.93 0.92
Pm/Pmo 0.95 0.90 0.86
Design Parameters
Voltage Vl (mV) 2350; Average current Ll ave (mA) 500; Minimum current Ll min (mA) 480
Diode Protection
Vforward(620mA) ≤1.0V ; Ireverse(4.0V) ≤50μA
Other Parameters
Absorption coefficient ≤0.92 ; Bearing tensile force ≥0.83N/mm2
Temperature Coefficient
Irradiation Intensity BOL 1MeV，5*1014e/cm2 1MeV，1*1015e/cm2
Jsc(μA/cm2/C) 11.0 10.0 13.0
Voc(mV/ C) -5.9 -6.1 -6.3
Jm(μA/cm2/C) 9.0 9.5 15.0
Vm(mV/ C) -6.0 -6.2 -6.5